Irf3205 datasheet на русском скачать

Irf3205 datasheet на русском.

Предельно допустимое напряжение затвор-исток (Ugs): 10 V. Максимально допустимый постоянный ток стока (Id): 98 A. Максимальная температура канала (Tj): 150 °C. Общий заряд затвора (Qg): 146 nC. Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm.

Тип корпуса: TO220AB. IRF3205 Datasheet (PDF) ?PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0m? G l Fully Avalanche Rated l Lead-Free >1.2. irf3205a irf3205h.pdf Size:596K _upd. ?RoHS IRF3205 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (110A, 55Volts) DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability D D of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient. ?PD-94791B IRF3205PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0m? G l Fully Avalanche Rated l Lead-Free >1.4. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd. ?PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m? l Lead-Free G Description > 1.5. irf3205s.pdf Size:160K _international_rectifier.

PD - 94149 IRF3205S/L HEXFET? Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175?C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated >1.6. irf3205 .pdf Size:97K _international_rectifier. PD-91279E IRF3205 HEXFET? Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175?C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated >1.7. irf3205.pdf Size:92K _international_rectifier. PD-91279E IRF3205 HEXFET? Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175?C Operating Temperature RDS(on) = 8.0m?

G Fast Switching Fully Avalanche Rated >1.8. irf3205z.pdf Size:181K _international_rectifier. PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET? Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175?C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax >1.9. irf3205.pdf Size:450K _first_silicon. ?SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25?) Parameter Symbol Rating Unit 1.Gate.